Built in Charge pump circuit: Gate source voltage VGS = 5.6 V and 10 V typ.

Under Voltage Lock Out : VIN_UVLO = 2.0 V typ.

Wide input voltage operation: VIN = 2.7 to 28 V.

High maximum input voltage: VIN max = 40 V.

Gate driver for N-channel Single High side MOSFET.

Gate driver for N-channel Common Drain MOSFET.

The drivers are intended for use in N-channel common drain and single high side MOSFET circuit configurations and have the following features. Thus this is suitable for mobile, wearable systems and power management circuits such as load switch applications. Package is very small and thin WCSP6G (1.2 mm x 0.8 mm (typ.), t: 0.35 mm (max)). And this features low standby current, less than 1 ♚, built in charge pump circuit and MOSFET gate-source protection circuit. This product supports MOSFET operating in a wide voltage line from 2.7 V to 28 V with various Over Voltage Lock Out lineups. TCK42xG series is an Over Voltage Protection Gate Driver IC for External N-channel MOSFET. The drivers are designed to be utilized at the following voltage levels. The TCK42xG is a series of six MOSFET gate driver ICs for power line application. Features and Applications of the TCK42xG Driver However, the performance of these critical components depends upon power management as provided by the TCK42G series of MOSFET driver ICs from Toshiba. This includes spacecraft, airplanes, automobiles, mobile phones, and wearables.

Today, metal-oxide-semiconductor field-effect transistors (MOSFETs) – the most implemented transistor type – can be found in virtually all products, including electronics and circuit boards. This semiconductor has continually evolved while also changing almost every facet of our lives by controlling and driving the electronics and technology we use and rely upon. Although most people were unaware of its significance, this is when the transistor made its first public appearance. Applications for the TCK42xG series MOSFET driverĭecember 23, 1947, was a day that changed the world.

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